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| PIN Diodes MA3X551 Silicon epitaxial planar type Unit : mm For UHF and SHF bands AGC 0.65 0.15 2.8 - 0.3 + 0.2 1.5 - 0.05 + 0.25 0.65 0.15 * Small diode capacitance CD * Large variable range of forward dynamic resistance rf * Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 0.95 1.9 0.2 2.9 - 0.05 + 0.2 1 3 2 0.95 1.45 I Features Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature VRM IF PD Topr Tstg 45 100 150 -25 to +85 -55 to +150 V mA mW C C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: MY Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 A, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF k Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 Reverse voltage (DC) VR 40 V 0.1 to 0.3 0.4 0.2 0.8 Parameter Symbol Rating Unit 1.1 - 0.1 0.16 - 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.4 - 0.05 + 0.1 1 MA3X551 IF V F 1 000 Ta = 25C PIN Diodes CD VR f = 1 MHz Ta = 25C 1 2 100 IR T a VR = 40 V Diode capacitance CD (pF) Forward current IF (mA) 100 0.5 0.3 0.2 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 10 1 0.1 1 0.1 0.05 0.03 0.1 0.02 0 0.4 0.8 1.2 1.6 2.0 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) 104 rf IF f = 100 MHz Ta = 25C Forward dynamic resistance rf () 103 102 10 1 0.01 0.1 1 10 Forward current IF (mA) 2 |
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